• 激光与激光光学 •

### 表面改性硅的超快激光脉冲制备及光电特性研究

1. 吉林大学 电子科学与工程学院 集成光电子国家重点实验室，长春 130012
• 收稿日期:2020-04-28 接受日期:2020-06-30 出版日期:2020-10-25 发布日期:2020-10-13

### Research on Fabrication and Optoelectronic Properties of Surface Modified Silicon by Ultrafast Laser Pulse

Yang YANG(), Chao LI, Ji-hong ZHAO()

1. State Key Laboratory of Integrated Optoelectronics，College of Electronic Science and Engineering，Jilin University，Changchun 130012，China
• Received:2020-04-28 Accepted:2020-06-30 Online:2020-10-25 Published:2020-10-13
• About author:YANG Yang (1995-), male, B.S. degree candidate, mainly focuses on ultrafast laser fabrication of black silicon. Email:2262616446@qq.com|（Contact author）: ZHAO Ji-hong (1984-), female, associate professor, Ph.D. degree, mainly focuses on ultrafast laser fabrication of black silicon. Email: zhaojihong@jlu.edu.cn
• Supported by:
National Natural Science Foundation of China(61775077)

Abstract:

In order to extend the absorption edge of crystalline silicon to the near infrared band to meet the requirement of optical communication，the textured silicon was obtained by irradiation of nanosecond laser pulses. The surface morphology of modified silicon under irradiation with different laser fluence from 0.39 J/cm2 to 24 J/cm2 was investigated. Then， the optical properties including reflectance， transmittance， and absorptance of silicon samples by nanosecond laser irradiation with different laser fluence were measured. The results show that the absorptance below the bandgap of silicon enhances for all the textured silicon samples and it is up to 55% for near infrared light of 1 500 nm. Next， the thermal stability of infrared absorption for the textured silicon samples was investigated. The thermal annealing process at temperatures of 473~1 073 K can slightly reduce the absorptance below the bandgap of silicon and the magnitude of reduction only varied within 10%. Moreover， the dependence of reflectance， transmittance， and absorptance of modified silicon on the annealing temperature was studied on. Lastly， the crystal structures of modified silicon were determined by Raman spectroscope. After irradiation of nanosecond laser pulses， the crystalline silicon surface is disordered and amorphous or polycrystalline phases are formed. However， the crystal quality of textured silicon can be improved by post-thermal annealing process.