光子学报 ›› 2020, Vol. 49 ›› Issue (10): 1025002-1025002.doi: 10.3788/gzxb20204910.1025002

• 光电子学 • 上一篇    下一篇

键合Si/Si p-n结电学输运特性及电场增强效应研究

彭强(), 何盛泉, 任良斌, 李杏莲, 柯少颖   

  1. 闽南师范大学 物理与信息工程学院,福建 漳州 363000
  • 收稿日期:2020-05-12 接受日期:2020-09-03 出版日期:2020-10-25 发布日期:2020-10-13
  • 作者简介:彭强(1997-),男,硕士研究生,主要研究方向为Si基半导体材料键合. Email: 1017846617@qq.com
  • 基金资助:
    国家自然科学基金(62004087);漳州市自然科学基金(ZZ2020J32);闽南师范大学校长基金(KJ19014)

Study of Electronic Transport Characteristic and Electric Field Enhancement Effect of Wafer-bonded Si/Si p-n Junction

Qiang PENG(), Sheng-quan HE, Liang-bin REN, Xing-lian LI, Shao-ying KE   

  1. College of Physics and Information Engineering,Minnan Normal University,Zhangzhou,Fujian 363000,China
  • Received:2020-05-12 Accepted:2020-09-03 Online:2020-10-25 Published:2020-10-13
  • Supported by:
    National Natural Science Foundation of China(62004087);Natural Science Foundation of Zhangzhou(ZZ2020J32);Presidential Research Fund of Minnan Normal University(KJ19014)

摘要:

Si/Si键合可以在低温下获得高强度、零气泡的键合片,但极难获得无氧化层的键合界面,因此难以应用于光电子领域,本文从理论上研究了Si/Si键合界面氧化层厚度对键合Si/Si p-n结光电特性(电流、带宽和光谱)的影响.通过隧穿率、载流子浓度、电场分布、载流子速率、复合率等参数的变化揭示键合Si/Si p-n结性能影响因素,为超高质量Si基Si雪崩层及高性能Si基雪崩器件的制备提供理论指导.结果表明:随着氧化层厚度的增加,载流子隧穿率变小,p-n结光暗电流降低(光谱响应下降)、复合率下降、载流子在p-n结内出现堆积.其次,随着氧化层厚度的增加,器件RC时间常数变大,氧化层内电场增强,导致Si层内电场下降,3 dB带宽变小.

关键词: 薄膜, 氧化层, Si/Si键合, 载流子隧穿, 电场

Abstract:

Although high-strength and bubble-free Si/Si wafer pairs can be obtained by the Si/Si wafer bonding, the oxide-layer-free Si/Si bonded interface is difficult to be achieved. Thus, the Si/Si wafer bonding is difficult to be used in the field of optoelectronics. The effect of oxide layer thickness on the photoelectric characteristics (current, bandwidth, and spectrum) of wafer-bonded Si/Si p-n junction is studied. The factors which affect the performance of the Si/Si p-n junction are clarified by the simulation of carrier tunneling rate, carrier concentration, electric field, carrier velocity, and recombination rate. This may give guidance for the fabrication of ultrahigh-quality Si-based Si avalanche layer and high-performance Si-based avalanche device. The simulation results show that: with the increase of the oxide layer thickness, the carrier tunneling rate decreases, leading to the decrease of the dark current and photocurrent. The recombination rate also decreases and the carriers aggregate in the p-n junction. In addition, with the increase of the oxide layer thickness, the RC time constant of the device increases and the electric field enhances in the oxide layer, leading to the decrease of the electric field, which in turn results in the decrease of the 3 dB bandwidth.

Key words: Thin film, Oxide layer, Si/Si wafer bonding, Carrier tunneling, Electric field

中图分类号: