光子学报 ›› 2020, Vol. 49 ›› Issue (10): 1031002-1031002.doi: 10.3788/gzxb20204910.1031002

• 薄膜 • 上一篇    

兼容电磁屏蔽红外增透薄膜器件的研究

王建(), 徐均琪(), 苏俊宏, 李阳, 师云云   

  1. 西安工业大学 陕西省薄膜技术与光学检测重点实验室,西安 710021
  • 收稿日期:2020-05-18 接受日期:2020-08-17 出版日期:2020-10-25 发布日期:2020-10-13
  • 通讯作者: 徐均琪 E-mail:lannyla@163.com;jqxu2210@163.com
  • 作者简介:王建(1993-),男,硕士研究生,主要研究方向为薄膜及激光损伤.Email:lannyla@163.com|徐均琪(1973-),男,教授,博士,主要研究方向为薄膜技术. Email:jqxu2210@163.com
  • 基金资助:
    陕西省国际科技合作与交流计划(2018KWZ-02);陕西省自然科学基础研究计划(2016JZ025);西安市智能探视感知重点实验室项目(201805061ZD12CG45)

Research on Infrared Anti-reflection Thin Film Devices with Compatibility of Electromagnetic Shielding

Jian WANG(), Jun-qi XU(), Jun-hong SU, Yang LI, Yun-yun SHI   

  1. Shaanxi Province Thin Film Technology and Optical Test Open Key Laboratory,Xi'an Technological University,Xi'an 710021,China
  • Received:2020-05-18 Accepted:2020-08-17 Online:2020-10-25 Published:2020-10-13
  • Contact: Jun-qi XU E-mail:lannyla@163.com;jqxu2210@163.com
  • Supported by:
    International Science and Technology Cooperation and Exchange Program of Shaanxi Province(2018KWZ-02);Basic Research Program of Natural Science of Shaanxi Province(2016JZ025);Xian Key Laboratory of Intelligent Visiting Perception(201805061ZD12CG45)

摘要:

利用光刻掩模和热蒸发沉积技术制备兼容电磁屏蔽红外窗口薄膜器件,实现3~5 μm波段红外信号高效增透,且能屏蔽12~18 GHz频段的电磁波信号.通过光刻掩模和真空热蒸发沉积技术在双面抛光Si基底上制备满足要求的十字交叉对称金属网栅结构,通过离子束辅助电子束热蒸发沉积技术制备3~5 μm波段高效增透的红外膜.为进一步改善金属网栅的透射率,在周期g为550 μm,不同线宽的金属网栅薄膜上沉积红外增透膜.结果表明:通过真空式傅里叶变换红外光谱仪测试得红外膜样片在3~5 μm的峰值透射率为99.8%,平均透射率为99.3%.矢量网络分析仪测试金属网栅12~18 GHz频段的电磁屏蔽效能,得到兼容电磁屏蔽红外窗口薄膜器件在12~18 GHz频段内总体电磁屏蔽效能优于27 dB,3~5 μm红外波段的峰值透射率为86.3%,平均透射率为86.1%.金属网栅薄膜上镀制增透膜在保证电磁屏蔽效能不变(≥27 dB)的前提下,网栅光谱(透射率)提高了37.6%(网栅周期g为550 μm,线宽2a为30 μm).屏蔽效能的改善既可以通过调整网栅的周期和线宽,也可以选择电阻率较低的基底材料实现.

关键词: 电磁屏蔽, 红外, 真空热蒸发, 金属网栅, 减反膜, 透射率, 屏蔽效能

Abstract:

Photolithography mask and thermal evaporation deposition technology were used to fabricate a thin film devices compatible with electromagnetic shielding infrared window, which could realize the device to possess the efficient anti-reflection of infrared signals in the band of 3~5 μm and shield electromagnetic signals in the frequency band of 12~18 GHz. The cross-sectional symmetric metal grid microstructures which met requirements were prepared on the double-sided polished Si substrate by photolithography mask and vacuum thermal evaporation deposition technology, the highly efficient anti-reflection infrared in the 3~5 μm band was prepared by ion beam assisted electron beam thermal evaporation deposition technology. In order to improve the transmittance of the metal grid further, an infrared anti-reflection film was deposited on the metal grid coating with a cycle g of 550 μm and different line widths. Results show that the peak transmittance of the infrared anti-reflection film at 3~5 μm is 99.8% and the average transmittance is 99.3% through the measurement of vacuum Fourier infrared spectrometer. The electromagnetic shielding effectiveness in the 12~18 GHz frequency band of the metal grid was measured by vector network analyzer, and obtained the overall electromagnetic shielding efficiency of the compatible electromagnetic shielding infrared window thin film device in the 12~18 GHz band is better than 27 dB, the peak transmittance in the 3~5 μm infrared band is 86.3%, and the average transmittance is 86.1%. On the premise of ensuring the electromagnetic shielding efficiency is unchanged(≥27 dB), the transmittance of the metal grid films has increased by 37.6%(the grid cycle g is 550 μm, line width 2a is 30 μm). The improvement of shielding efficiency can be achieved either by adjusting the cycle and line width of the grid, or selecting a substrate material with lower resistivity.

Key words: Electromagnetic shielding, Infrared, Vacuum thermal evaporation, Metal mesh, Anti-reflection film, Transmittance, Shielding effectiveness

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