光子学报 ›› 2000, Vol. 29 ›› Issue (12): 1142-1147.

• 光电子学 • 上一篇    下一篇

硅雪崩光电二极管单光子探测器

梁创, 廖静, 梁冰, 吴令安   

  1. 中国科学院物理研究所光物理开放实验室, 北京603-15 信箱100080
  • 收稿日期:2000-04-10 出版日期:2000-12-25 发布日期:2000-12-25
  • 基金资助:
    国家自然科学基金;中国科学院计量测试高技术联合实验室资助项目

PERFORMANCE OF A SILICON AVALANCHE DIODE AS A SINGLE PHOTON DETECTOR

Liang Chuang, Liao Jing, Liang Bing, Wu Lingan   

  1. Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
  • Received:2000-04-10 Online:2000-12-25 Published:2000-12-25

摘要: 将硅雪崩光电二极管应用于盖革模式下,制作出高量子效率、低噪音、短死时间的单光子探测器.设计并制作了雪崩抑制电路,获得探测器特性参量为无源抑制方式下死时间1μs,有源抑制下60~80ns,输出脉冲宽度15~20ns.并详细检测了探测器直到液氮温度下的特性.观察到一些新现象.

关键词: 雪崩光电二极管, 雪崩抑制, 盖革模式, 单光子探测

Abstract: Silicon avalanche photodiodes operating in the Geiger mode are capable of detecting single photon in the near infrared regime.It is designed and tested two types of quenching circuit,with a dead time of about 1μs in the passive quenching mode and 60~80ns in the active quenching mode.The output pulse width is about 20ns.The performance of the detector under various operating temperatures has been investigated down to liquid nitrogen temperatures,and a new observation is reported.

Key words: Avalanche photodiode, Quenching, Geiger mode, Single photon detection