光子学报 ›› 2019, Vol. 48 ›› Issue (10): 1031002-1031002.doi: 10.3788/gzxb20194810.1031002

• 薄膜 • 上一篇    下一篇

GaSb衬底外延InAs薄膜及光学性质研究

张健, 唐吉龙, 亢玉彬, 方铉, 房丹, 王登魁, 林逢源, 魏志鹏   

  1. 长春理工大学 高功率半导体激光国家重点实验室, 长春 130022
  • 收稿日期:2019-05-24 出版日期:2019-10-25 发布日期:2019-07-23
  • 通讯作者: 唐吉龙(1977-),男,副教授,博士后,主要研究方向为半导体材料外延生长与器件.Email:jl_tangcust@163.com E-mail:jl_tangcust@163.com
  • 作者简介:张健(1995-),男,硕士研究生,主要研究方向为III-V族半导体材料外延生长及表征.Email:zhang15764339456@163.com
  • 基金资助:

    国家自然科学基金(Nos.61704011,61674021,11674038),高功率半导体激光器国家重点实验室基金,吉林省科技发展项目(Nos.20160519007JH,20160520117JH,20160101255JC,20170520118JH)

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

ZHANG Jian, TANG Ji-long, KANG Yu-bin, FANG Xuan, FANG Dan, WANG Deng-kui, LIN Feng-yuan, WEI Zhi-peng   

  1. State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
  • Received:2019-05-24 Online:2019-10-25 Published:2019-07-23
  • Contact: 2019-07-23 E-mail:jl_tangcust@163.com
  • Supported by:

    The National Natural Science Foundation of China (Nos.61704011, 61674021, 11674038), the National Key Laboratory of High Power Semiconductor Lasers, the Science and Technology Development Project of Jilin Province (Nos.20160519007JH, 20160520117JH, 20160101255JC, 20170520118JH)

摘要:

利用分子束外延技术在GaSb(100)衬底上先生长作为缓冲层以降低薄膜失配度的低Sb组分的三元合金InAsSb,再生长InAs薄膜.在整个生长过程中通过反射高能电子衍射仪进行实时原位监测.InAs薄膜生长过程中,电子衍射图案显示了清晰的再构线,其薄膜表面具有原子级平整度.利用原子力显微镜对InAs薄膜进行表征,结果显示较低Sb组分的InAsSb缓冲层上外延InAs薄膜的粗糙度比较高Sb组分的InAsSb缓冲层上外延InAs薄膜的粗糙度降低了约2.5倍.通过对不同Sb组分的三元合金InAsSb缓冲层上外延的InAs薄膜进行X射线衍射测试及对应的模拟,结果表明在较低Sb组分的InAsSb缓冲层上外延InAs薄膜的衍射峰半高峰宽较小,说明低Sb组分的InAsSb作为缓冲层可以降低InAs薄膜的内应力,提高InAs薄膜的结晶质量.利用光致发光光谱对高结晶质量的InAs薄膜进行发光特性研究,10 K下InAs的发光峰位约为0.418 eV,为自由激子发光.

关键词: InAsSb缓冲层, 晶体质量, 发光特性, 分子束外延技术, 晶格失配, InAs薄膜, X射线衍射

Abstract:

The ternary alloy InAsSb of the low Sb component as the buffer layer, which reduces the mismatch of the film, was grown on the GaSb (100) substrate by using the molecular beam epitaxy, and then regrown the InAs film. Real-time in situ monitoring by reflection high energy electron diffraction throughout the growth process. Following the growth of the InAs film, the electron diffraction pattern showed a clear reconstitution line, with the surface of the film having atomic flatness. Atomic Force Microscopy is used to characterize InAs films, and the results show that the roughness of epitaxial InAs film on the InAsSb buffer with lower Sb components is reduced by about 2.5 times than the roughness of epitaxial InAs film on the InAsSb buffer with higher Sb components. X-ray diffraction and simulation were performed for epitaxial InAs films on ternary alloy InAsSb buffer with different Sb composition. The results show that the full width half maximun of the diffraction peak of the epitaxial InAs film on the lower Sb composition of InAsSb buffer layer is smaller. It is indicated that the InAsSb with a low Sb component acting as a buffer layer can reduce the internal stress of the InAs film and can improve the crystal quality of the InAs film. The luminescence properties of InAs films with high crystal quality were studied by photoluminescence spectroscopy. The luminescence peak of InAs is about 0.418 eV at 10 K, which is free exciton luminescence.

Key words: Crystal quality, InAs film, Molecular beam epitaxy, InAsSb buffer layer, Lattice mismatch, X-ray diffraction, Luminescence properties

中图分类号: