Acta Photonica Sinica ›› 2010, Vol. 39 ›› Issue (10): 1738-1741.doi: 10.3788/gzxb20103910.1738

• Optoelectronics and Photoelectric Device • Previous Articles     Next Articles

Electron Ultrafast Relaxation Process in Semiconductor Nanoparticles

CHEN Zhen-yu,LIANG Rui-sheng,HUANG Shu-liang,LIAO Hao-xiang,MA Zhi-jian   

  1. (Laboratory of Photonic Information Technology,School of Information and Optoelectronic Science and Engineering,South China Normal University,Guangzhou 510006,China)
  • Received:2009-10-28 Revised:2009-12-17 Online:2010-10-25 Published:2010-10-25
  • About author:was born in 1983.Now he currently is a M.S.degree candidate and his research interests focus on optical engineering.

Abstract:

To study the dynamic process excited by femtsecond laser,a carrier model with three energy level and trap is constructed,with which the electron rate equation is obtained.The numerical simulation is used to calculate the electron number change of each energy level and the differentiated absorbtion rate as the time goes by.With the change of the electron’s absorption cross-section,differentiated absorbtion rate will have a ultrafast change process.Compared with the experimental result of Fanxin Wu,the differentiated absorbtion rate curves are basically the same,which shows the model have some rationality.

Key words:  Semiconductor nanoparticle, Carrier relaxation, Rate equation, Numerical simulation

CLC Number: