Acta Photonica Sinica ›› 2019, Vol. 48 ›› Issue (6): 616002-0616002.doi: 10.3788/gzxb20194806.0616002

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Influence of Electrical Injection Annealing on Property of Multi-crystalline Silicon PERC Solar Cell

PENG Jia-qi1, SHEN Hong-lie1, WEI Qing-zhu2, NI Zhi-chun2, ZHAO Lei1, GU Hao1, WANG Ming-ming1   

  1. 1. Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China;
    2. Research and Development Department, Suzhou Talesun Solar Technologies Co., Ltd., Changshu, Jiangsu 215542, China
  • Received:2019-01-11 Online:2019-06-25 Published:2019-04-03
  • Supported by:

    The National Natural Science Foundation of China (No.61174084), the Joint Prontier Research Project of Jiangsu Province (No.BY2016003-09), the Special Fund of Jiangsu Province for the Transformaiton of Science and Technological Achievements (No.BA2015121)


Electrical injection annealing effect was performed in gallium-doped and boron-doped multi-crystalline silicon Passivated Emitter And Rear Cells (PERC). The electrical properties and the external quantum efficiency of the solar cells with different treatments were measured by the Halm electrical performance tester and quantum efficiency tester respectively.The results show that the treatment with 8.0 A electric injection current at 260℃ for 2 h is beneficial to promote the transition from degradation to regeneration. The conversion efficiency is enhanced by 0.83% after electric injection annealing, and the degradation of its conversion efficiency is only 0.61% from virgin value after illumination for 5 h. The light induced degradation of multi-crystalline silicon PERC colud be reduced by electrical injection annealing, and the gallium-doped multi-crystalline silicon PERC solar cell has lower light induced degradation, which is reduced by about 50% compared with that in boron-doped multi-crystalline silicon PERC solar cell.

Key words: Solar energy, Multi-cryatalline silicon passivated emitter and rear cells, Electrical injection annealing, Light induced degradation, Photoelectric material

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